Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light- Emitting Diodes
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چکیده
منابع مشابه
Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing
In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and t...
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تاریخ انتشار 2010